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Probing the length, path, and charge displacement of voltage sensor S4 in ion channels during gating

机译：门控期间探测离子通道中电压传感器S4的长度，路径和电荷位移

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Gamal El-Din, T M;
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年度 2009
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原文格式 PDF
正文语种 eng
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1. Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels [J] . Zhuren Wang, Ying Dou, Samuel J. Goodchild, The Journal of general physiology . 2013 ,第4期

机译：hERG通道激活期间门控电荷运动和S4电压传感器暴露的成分
2. Movement of Voltage Sensor S4 in Domain 4 Is Tightly Coupled to Sodium Channel Fast Inactivation and Gating Charge Immobilization [J] . Frank J.P. Kühn, Nikolaus G. Greeff The Journal of general physiology . 1999 ,第2期

机译：电压传感器S4在域4中的运动与钠通道快速失活和门控电荷固定紧密耦合
3. Voltage-insensitive Gating after Charge-neutralizing Mutations in the S4 Segment of Shaker Channels [J] . Hongxia Bao, Atiya Hakeem, Mark Henteleff, The Journal of general physiology . 1999 ,第1期

机译：摇床通道S4段中的电荷中和突变后的电压不敏感门控
4. Determination of Surface Space Charge Density on Semiconductor from Displacement Current-Voltage Curve using a Scanning Vibrating Probe [C] . Yutaka Majima, Tomohiko Masuda, Setsuri Uehara, Materials Research Society Symposium . 2002

机译：使用扫描振动探针确定从位移电流 - 电压曲线中半导体的表面空间电荷密度
5. A statistical mechanical model of the gating charge of potassium ion voltage-gated channels. [D] . Smith, Linda Anne. 2006

机译：钾离子电压门控通道的门控电荷的统计力学模型。
6. Components of gating charge movement and S4 voltage-sensor exposure during activation of hERG channels [O] . Zhuren Wang, Ying Dou, Samuel J. Goodchild, 2013

机译：hERG通道激活期间门控电荷运动和S4电压传感器暴露的成分
7. Charge Reversion to Charge Carrying Positions of S4 in Voltage Gated Shaker K-Channels [O] . González-Pérez Vivian, Stack Katherine, Naranjo David 2010

机译：电压门控振荡器K通道中S4的电荷转移位置的电荷恢复

Probing the length, path, and charge displacement of voltage sensor S4 in ion channels during gating

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